Thermal management materials for electronics, developed by GTE, display high thermal conductivity which can reach >700 W/m.K compared to @400 W/m.k for pure copper and matched thermal expansion to Si and wide band gap materials. They are based on diamond particles held together by a metal ‘glue’ such as high purity copper and other high thermal conductivity metals which constitute the minor phase of the material.

The diamond containing materials containing up to 65% by volume of diamond powder are consolidated by advanced materials processing including powder based Field assisted sintering (FAST) and fusion-based additive manufacturing (AM).

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